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Proceedings Paper

AlGaN-based structures on sapphire for visible blind Schottky-barrier UV photodetectors: toward high-performance device applications
Author(s): Franck Omnes; Eva Monroy; Bernard Beaumont; Fernando Calle; Elias Munoz Merino; Pierre J. L. Gibart
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Paper Abstract

AlxGa1-xN material system, whose bandgap lies in the 3.42-6.2 eV range, is extremely interesting for visible and solar blind UV photodetector applications. This paper describes the device performances of AlxGa1-xN UV Schottky barrier photodetectors for visible-blind applications grown on c-oriented sapphire, with a detailed balance with the basic materials properties. Conventional low temperature grown AlN or GaN were used in all applications. High quality Schottky barrier photodiodes made of Epitaxial Lateral Overgrown (ELOG) GaN are also presented. All Schottky barrier devices show a fast time response, a high UV-visible rejection factor, and high absolute values of above bandgap responsivities. A new application of AlGaN UV Schottky barrier photodetectors to monitor the biological action of the solar UV radiation, as well as the device performance of high quality GaN and AlGaN Metal Semiconductor Metal with cutoff wavelengths as short as 310 nm, are described in detail.

Paper Details

Date Published: 13 April 2000
PDF: 16 pages
Proc. SPIE 3948, Photodetectors: Materials and Devices V, (13 April 2000); doi: 10.1117/12.382124
Show Author Affiliations
Franck Omnes, CNRS (France)
Eva Monroy, Univ. Politecnica de Madrid (Spain)
Bernard Beaumont, CNRS (France)
Fernando Calle, Univ. Politecnica de Madrid (Spain)
Elias Munoz Merino, Univ. Politecnica de Madrid (Spain)
Pierre J. L. Gibart, CNRS (France)


Published in SPIE Proceedings Vol. 3948:
Photodetectors: Materials and Devices V
Gail J. Brown; Manijeh Razeghi, Editor(s)

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