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Proceedings Paper

Growth and optimization of GaInAsP/InP material system for quantum well infrared photodetector applications
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Paper Abstract

Multi-quantum well structures of GaxIn1-xAsyP1-y were grown by metalorganic chemical vapor deposition for the fabrication of quantum well IR photodetectors. The thickness and composition of the wells was determined by high-resolution x-ray diffraction and photoluminescence experiments. The intersubband absorption spectrum of the Ga0.47In0.53As/InP, Ga0.38In0.62As0.80P0.20 (1.55 micrometers )/InP, and Ga0.27In0.73As0.57P0.43 (1.3 micrometers )/InP quantum wells are found to have cutoff wavelengths of 9.3 micrometers , 10.7 micrometers , and 14.2 micrometers respectively. These wavelengths are consistent with a conduction band offset to bandgap ratio of approximately 0.32. Facet coupled illumination responsivity and detectivity are reported for each composition.

Paper Details

Date Published: 13 April 2000
PDF: 6 pages
Proc. SPIE 3948, Photodetectors: Materials and Devices V, (13 April 2000); doi: 10.1117/12.382123
Show Author Affiliations
Matthew Erdtmann, Northwestern Univ. (United States)
J. Jiang, Northwestern Univ. (United States)
Anthony W. Matlis, Northwestern Univ. (United States)
Abbes Tahraoui, Northwestern Univ. (United States)
Christopher Louis Jelen, Northwestern Univ. (United States)
Manijeh Razeghi, Northwestern Univ. (United States)
Gail J. Brown, Air Force Research Lab. (United States)


Published in SPIE Proceedings Vol. 3948:
Photodetectors: Materials and Devices V
Gail J. Brown; Manijeh Razeghi, Editor(s)

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