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Proceedings Paper

High-responsivity GaInAs/InP quantum well infrared photodetectors grown by low-pressure metalorganic chemical vapor deposition
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Paper Abstract

We have studied the dependence of the well doping density in n-type GaInAs/InP quantum well IR photodetectors (QWIPs) grown by low-pressure metalorganic chemical vapor deposition. Three identical GaInAs/InP QWIP structures were grown with well sheet carrier densities of 1 by 1011 cm-2, 3 by 1011 cm-2, and 10 by 1011 cm-2; all three samples had very sharp spectral response at (lambda) equals 9.0 micrometers . We find that there is a large sensitivity of responsivity, dark current, noise current, and detectivity with the well doping density. Measurements revealed that the lowest-doped samples had an extremely low responsivity relative to the doping concentration while the highest-doped sample had an excessively high dark current relative to doping. The middle-doped sample yielded the optimal results. This QWIP had a responsivity of 33.2 A/W and operated with a detectivity of 3.5 by 1010 cmHz1/2W-1 at a bias of 0.75 V and temperature of 80 K. This responsivity is the highest value reported for any QWIP in the (lambda) equals 8-9 micrometers range. Analysis is also presented explaining the dependence of the measured QWIP parameters to well doping density.

Paper Details

Date Published: 13 April 2000
PDF: 7 pages
Proc. SPIE 3948, Photodetectors: Materials and Devices V, (13 April 2000); doi: 10.1117/12.382122
Show Author Affiliations
Matthew Erdtmann, Northwestern Univ. (United States)
Anthony W. Matlis, Northwestern Univ. (United States)
Christopher Louis Jelen, Northwestern Univ. (United States)
Manijeh Razeghi, Northwestern Univ. (United States)
Gail J. Brown, Air Force Research Lab. (United States)


Published in SPIE Proceedings Vol. 3948:
Photodetectors: Materials and Devices V
Gail J. Brown; Manijeh Razeghi, Editor(s)

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