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Proceedings Paper

Microscopic model of impact ionization in AlxGa1-xSb
Author(s): Christoph H. Grein; Henry Ehrenreich
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Paper Abstract

The impact ionization rates and coefficients are computed for AlxGa1-xSb avalanche photodiodes with alloy compositions near the resonance between the energy gap and the spin-orbit splitting. Realistic psuedopotential band structures and wavefunctions including spin-orbit corrections are employed to evaluate the electron and hole initiated impact ionization rates. We address seemingly contradictory experimental data regarding the presence of an enhancement in the hole to electron impact ionization coefficient ratio near the resonance between the energy gap and the spin-orbit splitting. The hole to electron impact ionization coefficient ratio shows no enhancement at high electric fields. However, an enhancement due to the resonance in the band structure is predicted for weak fields.

Paper Details

Date Published: 13 April 2000
PDF: 6 pages
Proc. SPIE 3948, Photodetectors: Materials and Devices V, (13 April 2000); doi: 10.1117/12.382120
Show Author Affiliations
Christoph H. Grein, Univ. of Illinois/Chicago (United States)
Henry Ehrenreich, Harvard Univ. (United States)


Published in SPIE Proceedings Vol. 3948:
Photodetectors: Materials and Devices V
Gail J. Brown; Manijeh Razeghi, Editor(s)

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