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Proceedings Paper

Growth and characterization of very long wavelength type-II infrared detectors
Author(s): Hooman Mohseni; Abbes Tahraoui; Joseph S. Wojkowski; Manijeh Razeghi; W. C. Mitchel; Adam W. Saxler
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Paper Abstract

We report on the growth and characterization of type-II IR detectors with a InAs/GaSb superlattice active layer in the 15-19 micrometers wavelength range. The material was grown by molecular beam epitaxy on semi-insulating GaAs substrates. The material was processed into photoconductive detectors using standard photolithography, dry etching, and metalization. The 50 percent cut-off wavelength of the detectors is about 15.5 micrometers with a responsivity of 90mA/W at 80K. The 90 percent-10 percent cut-off energy width of the responsivity is only 17meV which is an indication of the uniformity of the superlattices. These are the best reported values for type-II superlattices grown on GaAs substrates.

Paper Details

Date Published: 13 April 2000
PDF: 8 pages
Proc. SPIE 3948, Photodetectors: Materials and Devices V, (13 April 2000); doi: 10.1117/12.382113
Show Author Affiliations
Hooman Mohseni, Northwestern Univ. (United States)
Abbes Tahraoui, Northwestern Univ. (United States)
Joseph S. Wojkowski, Northwestern Univ. (United States)
Manijeh Razeghi, Northwestern Univ. (United States)
W. C. Mitchel, Air Force Research Lab. (United States)
Adam W. Saxler, Air Force Research Lab. (United States)

Published in SPIE Proceedings Vol. 3948:
Photodetectors: Materials and Devices V
Gail J. Brown; Manijeh Razeghi, Editor(s)

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