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Proceedings Paper

Residual oxygen contamination of InAlGaAs SQW high-power laser diodes
Author(s): John Stuart Roberts; Lesley M. Smith; Peter L. Tihanyi
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Paper Abstract

MOVPE grown InAlGaAs SQW lasers for approximately 730 nm have been optimized for low oxygen incorporation, where diethylether associated with trimethylindium (TMI) provides the dominant oxygen impurity. An ether free preparative route to TMI, together with a large indium fraction for the SQW has provided device lifetimes of approximately 2000 hours when operating at 1.2 W and 743 nm.

Paper Details

Date Published: 18 April 2000
PDF: 8 pages
Proc. SPIE 3947, In-Plane Semiconductor Lasers IV, (18 April 2000); doi: 10.1117/12.382107
Show Author Affiliations
John Stuart Roberts, Univ. of Sheffield (United Kingdom)
Lesley M. Smith, Epichem Ltd. (United Kingdom)
Peter L. Tihanyi, PLT Technology Inc. (United States)

Published in SPIE Proceedings Vol. 3947:
In-Plane Semiconductor Lasers IV
Luke J. Mawst; Ramon U. Martinelli, Editor(s)

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