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Proceedings Paper

High-power AlGaInAs/GaAs microstack laser bars
Author(s): Christian Hanke; Lutz Korte; Bruno D. Acklin; Martin Behringer; Gerhard Herrmann; Johann Luft; B. De Odorico; Marcel Marchiano; Jens Wilhelmi
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Paper Abstract

The maximum useful optical power of laser bars is limited due to thermal and lifetime constraints to typical values of 50 W/cm cw or 120 W/cm qcw. A promising new approach is the so-called microstack laser in which several laseractive areas are integrated vertically in the same monolithic structure. In order to drive these structures in series with high efficiency low-resistance tunnel-junctions have to be realized. By optimizing the MOVPE growth process tunnel- junctions with a specific differential resistivity of 2.5 X 10-4 (Omega) cm2 could be obtained, which are suitable for the monolithic inter-connection of laser structures.

Paper Details

Date Published: 18 April 2000
PDF: 8 pages
Proc. SPIE 3947, In-Plane Semiconductor Lasers IV, (18 April 2000); doi: 10.1117/12.382106
Show Author Affiliations
Christian Hanke, Infineon Technologies AG (Germany)
Lutz Korte, Infineon Technologies AG (Germany)
Bruno D. Acklin, Osram Opto Semiconductors GmbH (Germany)
Martin Behringer, Osram Opto Semiconductors GmbH (Germany)
Gerhard Herrmann, Osram Opto Semiconductors GmbH (Germany)
Johann Luft, Osram Opto Semiconductors GmbH (Germany)
B. De Odorico, Dilas Diodenlaser GmbH (Germany)
Marcel Marchiano, Dilas Diodenlaser GmbH (Germany)
Jens Wilhelmi, Dilas Diodenlaser GmbH (Germany)


Published in SPIE Proceedings Vol. 3947:
In-Plane Semiconductor Lasers IV
Luke J. Mawst; Ramon U. Martinelli, Editor(s)

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