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Proceedings Paper

High-brightness tapered laser sources in the 1.3- to 2.0-um wavelength range
Author(s): James N. Walpole; Joseph P. Donnelly; H. K. Choi; Zong-Long Liau; Leo J. Missaggia; Robert J. Bailey; Steven H. Groves; George W. Turner; Patrick J. Taylor; Vincento Daneu
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Paper Abstract

Recent progress in tapered high-brightness lasers emitting in the near infrared region from 1.3 to 2.0 micrometers is reviewed. Improved power and beam quality are obtained for tapered lasers operating near 1.55 micrometers using Gaussian distributed lateral carrier injection profiles. Results for high-brightness 9-element arrays of tapered lasers emitting near 2.0 micrometers are included. Also included is a discussion of the use of mass-transported microlenses for collimating the output of the astigmatic tapered devices and coupling them into optical fibers.

Paper Details

Date Published: 18 April 2000
PDF: 10 pages
Proc. SPIE 3947, In-Plane Semiconductor Lasers IV, (18 April 2000); doi: 10.1117/12.382105
Show Author Affiliations
James N. Walpole, MIT Lincoln Lab. (United States)
Joseph P. Donnelly, MIT Lincoln Lab. (United States)
H. K. Choi, MIT Lincoln Lab. (United States)
Zong-Long Liau, MIT Lincoln Lab. (United States)
Leo J. Missaggia, MIT Lincoln Lab. (United States)
Robert J. Bailey, MIT Lincoln Lab. (United States)
Steven H. Groves, MIT Lincoln Lab. (United States)
George W. Turner, MIT Lincoln Lab. (United States)
Patrick J. Taylor, MIT Lincoln Lab. (United States)
Vincento Daneu, MIT Lincoln Lab. (United States)

Published in SPIE Proceedings Vol. 3947:
In-Plane Semiconductor Lasers IV
Luke J. Mawst; Ramon U. Martinelli, Editor(s)

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