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Proceedings Paper

Comparative study of near-threshold gain mechanisms in GaN epilayers and GaN/AlGaN separate confinement heterostructures
Author(s): Sergiy Bidnyk; Jack Biu Lam; Brian D. Little; Gordon Hall Gainer; Yong Hwang Kwon; Jin-Joo Song; Gary E. Bulman; Hua-Shuang Kong
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Paper Abstract

We report the results of an experimental study on near- threshold gain mechanism in optically pumped GaN epilayers and GaN/AlGaN separate confinement heterostructures (SCHs) over the temperature range of 10 to 300 K. We show that in GaN epilayers the near-threshold gain mechanism is inelastic exciton-exciton scattering for temperatures below approximately 150 K, whereas at elevated temperatures an electron-hole plasma is the dominant gain mechanism. An analysis of the relative shift between the spontaneous emission and lasing peaks in SCH samples, combined with the temperature dependence of the lasing threshold, reveals that exciton-exciton scattering is the dominant gain mechanism leading to low-threshold ultraviolet lasing in the GaN/AlGaN SCH over the entire temperature range studied. Strongly polarized (TE:TM > 300:1) lasing peaks were observed in a wavelength range of 358 - 367 nm. We found that high finesse lasing modes originated from self-formed microcavities in the AlGaN and GaN layers. The lasing threshold was measured to be as low as 15 kW/cm2 at 10 K and 105 kW/cm2 at room temperature. Based on our results we suggest ways for the realization of GaN-active-medium UV laser diodes.

Paper Details

Date Published: 18 April 2000
PDF: 9 pages
Proc. SPIE 3947, In-Plane Semiconductor Lasers IV, (18 April 2000); doi: 10.1117/12.382095
Show Author Affiliations
Sergiy Bidnyk, Oklahoma State Univ. (United States)
Jack Biu Lam, Oklahoma State Univ. (United States)
Brian D. Little, Oklahoma State Univ. (United States)
Gordon Hall Gainer, Oklahoma State Univ. (United States)
Yong Hwang Kwon, Oklahoma State Univ. (United States)
Jin-Joo Song, Oklahoma State Univ. (United States)
Gary E. Bulman, Cree Research, Inc. (United States)
Hua-Shuang Kong, Cree Research, Inc. (United States)


Published in SPIE Proceedings Vol. 3947:
In-Plane Semiconductor Lasers IV
Luke J. Mawst; Ramon U. Martinelli, Editor(s)

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