Share Email Print
cover

Proceedings Paper

AlGaInN-based laser diodes
Author(s): Shiro Uchida; Satoru Kijima; Tsuyoshi Tojyo; Shinichi Ansai; Motonubu Takeya; Tomonori Hino; Katsuyoshi Shibuya; Shinroh Ikeda; Takeharu Asano; Katsunori Yanashima; Shigeki Hashimoto; Tsunenori Asatsuma; Masafumi Ozawa; Toshimasa Kobayashi; Yoshifumi Yabuki; Tsuneyoshi Aoki; Masao Ikeda
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The longer lifetime is desired for high power AlGaInN based violet lasers. We found that lifetime is strongly dependent on both the initial operating consumption power and the dislocation densities in the laser stripe. Pd/Pt/Au as a metal and AlGaN/GaN superlattice as a p-type cladding layer were incorporated to reduce the operating voltage. The optimization of device parameters as well as the stripe width and the RIE etching device depth led to the lower threshold current of 3.4 kA/cm2. We used the Pendeo epitaxy technique to get lower dislocation density approximately 107 cm-2. The LDs with these technologies showed an output power as high as 35 mW under room temperature CW condition without kink. The lifetime is more than 500 hours under CW operation with a constant power of 20 mW at 25 degree(s)C.

Paper Details

Date Published: 18 April 2000
PDF: 9 pages
Proc. SPIE 3947, In-Plane Semiconductor Lasers IV, (18 April 2000); doi: 10.1117/12.382094
Show Author Affiliations
Shiro Uchida, Sony Shiroishi Semiconductor Inc. (Japan)
Satoru Kijima, Sony Shiroishi Semiconductor Inc. (Japan)
Tsuyoshi Tojyo, Sony Shiroishi Semiconductor Inc. (Japan)
Shinichi Ansai, Sony Shiroishi Semiconductor Inc. (Japan)
Motonubu Takeya, Sony Shiroishi Semiconductor Inc. (Japan)
Tomonori Hino, Sony Shiroishi Semiconductor Inc. (Japan)
Katsuyoshi Shibuya, Sony Shiroishi Semiconductor Inc. (Japan)
Shinroh Ikeda, Sony Shiroishi Semiconductor Inc. (Japan)
Takeharu Asano, Sony Shiroishi Semiconductor Inc. (Japan)
Katsunori Yanashima, Sony Shiroishi Semiconductor Inc. (Japan)
Shigeki Hashimoto, Sony Corp. (Japan)
Tsunenori Asatsuma, Sony Corp. (Japan)
Masafumi Ozawa, Sony Corp. (Japan)
Toshimasa Kobayashi, Sony Corp. (Japan)
Yoshifumi Yabuki, Sony Shiroishi Semiconductor, Inc. (Japan)
Tsuneyoshi Aoki, Sony Shiroishi Semiconductor, Inc. (Japan)
Masao Ikeda, Sony Shiroishi Semiconductor, Inc. (Japan)


Published in SPIE Proceedings Vol. 3947:
In-Plane Semiconductor Lasers IV
Luke J. Mawst; Ramon U. Martinelli, Editor(s)

© SPIE. Terms of Use
Back to Top