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Proceedings Paper

High-power highly reliable Al-free active region laser diodes in the 785- to 830-nm region
Author(s): John L. Nightingale; Michael J. Finander; Rashit F. Nabiev; Tiina E. Kuuslahti; Jukka Koengaes; Arto K. Salokatve
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Paper Abstract

Use of aluminum-free epitaxial structures for near-infrared laser diodes has been an active research area in the past decade. These edge-emitting laser diodes have demonstrated operational lifetimes exceeding 10,000 hours at high output powers and high efficiencies. Improvements in epitaxial structure, processing, and packaging have enabled these results. In this paper, we will review developments in aluminum-free laser diodes. We describe our recent work with these devices and conclude by discussing reliability issues.

Paper Details

Date Published: 18 April 2000
PDF: 9 pages
Proc. SPIE 3947, In-Plane Semiconductor Lasers IV, (18 April 2000); doi: 10.1117/12.382091
Show Author Affiliations
John L. Nightingale, Coherent Semiconductor Group (Finland)
Michael J. Finander, Coherent Semiconductor Group (Finland)
Rashit F. Nabiev, Coherent Semiconductor Group (Finland)
Tiina E. Kuuslahti, Coherent Semiconductor Group (Finland)
Jukka Koengaes, Coherent Semiconductor Group (Finland)
Arto K. Salokatve, Coherent Semiconductor Group (Finland)


Published in SPIE Proceedings Vol. 3947:
In-Plane Semiconductor Lasers IV
Luke J. Mawst; Ramon U. Martinelli, Editor(s)

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