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Proceedings Paper

Mid-IR type-II InAs/GaInSb interband cascade lasers
Author(s): John L. Bradshaw; Rui Q. Yang; John D. Bruno; John T. Pham; Donald E. Wortman
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Paper Abstract

We report our progress to date in the development of type-II interband cascade lasers emitting in the mid-IR (3.8-to-4.0 micrometers ) spectral region. We have demonstrated significant improvements over previously reported results in terms of differential external quantum efficiency (approximately 500%), peak power (>4 W/facet), peak power conversion efficiency (approximately 7%), maximum operating temperature (217 K), and continuous-wave (cw) operation. We briefly review some results for pulsed excitation and then present more detailed operating characteristics for the cw performance of our lasers, including the output power characteristics and the dependence of the output spectrum on current.

Paper Details

Date Published: 18 April 2000
PDF: 7 pages
Proc. SPIE 3947, In-Plane Semiconductor Lasers IV, (18 April 2000); doi: 10.1117/12.382090
Show Author Affiliations
John L. Bradshaw, Army Research Lab. (United States)
Rui Q. Yang, Army Research Lab. (United States)
John D. Bruno, Army Research Lab. (United States)
John T. Pham, Army Research Lab. (United States)
Donald E. Wortman, Army Research Lab. (United States)


Published in SPIE Proceedings Vol. 3947:
In-Plane Semiconductor Lasers IV
Luke J. Mawst; Ramon U. Martinelli, Editor(s)

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