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Proceedings Paper

Interband cascade lasers
Author(s): C.H. Thompson Lin; WenYen Hwang; Han Q. Le; Yao-Ming Mu; A. Liu; Jun Zheng; A. M. Delaney; Chau-Hong Kuo; Shin Shem Pei
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Paper Abstract

We report the recent progress of interband cascade (IC) lasers based on InAs/Ga(In)Sb/AlSb type-II quantum wells. For the 4.5-micrometers IC lasers, the internal loss was 11.6 cm-1 and the internal quantum efficiency was 460% at 90 K. When mounted epi-side down on diamond, cw operation was observed with an external quantum efficiency (EQE) of 193%, a cw output power over 500 mW, and a threshold current density as low as 35 A/cm2 at 80 K. Dual-wavelength IC laser was also demonstrated. The device lased simultaneously at 4.482 and 4.568 micrometers . At 110 K, a peak output power of 150 mW per facet was achieved with 5-microsecond(s) pulses at 1-KHz repetition rate. The threshold current density, average EQE, and peak output power of a 0.4-mm long device were 119 A/cm2, 278%, and 150 mW per facet, respectively.

Paper Details

Date Published: 18 April 2000
PDF: 7 pages
Proc. SPIE 3947, In-Plane Semiconductor Lasers IV, (18 April 2000); doi: 10.1117/12.382089
Show Author Affiliations
C.H. Thompson Lin, Univ. of Houston and Applied Optoelectronics Inc. (United States)
WenYen Hwang, Applied Optoelectronics Inc. (United States)
Han Q. Le, Univ. of Houston (United States)
Yao-Ming Mu, Univ. of Houston (United States)
A. Liu, Univ. of Houston (United States)
Jun Zheng, Univ. of Houston (United States)
A. M. Delaney, Univ. of Houston and Applied Optoelectronics Inc. (United States)
Chau-Hong Kuo, Univ. of Houston and Applied Optoelectronics Inc. (United States)
Shin Shem Pei, Univ. of Houston (United States)


Published in SPIE Proceedings Vol. 3947:
In-Plane Semiconductor Lasers IV
Luke J. Mawst; Ramon U. Martinelli, Editor(s)

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