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Proceedings Paper

High-power and diffraction-limited red lasers
Author(s): Bardia Pezeshki; Mats Hagberg; Bo Lu; Michael Zelinski; Sarah Zou; Emil I. Kolev
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Paper Abstract

We implemented various laser structures in the InGaAlP material system for operation in the 635 - 680 nm wavelength range. By incorporating a grating reflector within the device we can stabilize the lasing frequency, or maintain single spatial mode operation in a broad area device. Such devices include DBRs, tunable DBRs, monolithic MOPAs, DFBs, and angled-grating DFBs. Such performance can also be obtained without a buried grating layer by using an external fiber grating to stabilize the frequency or with a flared structure for high power single mode operation.

Paper Details

Date Published: 18 April 2000
PDF: 11 pages
Proc. SPIE 3947, In-Plane Semiconductor Lasers IV, (18 April 2000); doi: 10.1117/12.382085
Show Author Affiliations
Bardia Pezeshki, SDL, Inc. (United States)
Mats Hagberg, SDL, Inc. (United States)
Bo Lu, SDL, Inc. (United States)
Michael Zelinski, SDL, Inc. (United States)
Sarah Zou, SDL, Inc. (United States)
Emil I. Kolev, SDL, Inc. (United States)


Published in SPIE Proceedings Vol. 3947:
In-Plane Semiconductor Lasers IV
Luke J. Mawst; Ramon U. Martinelli, Editor(s)

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