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Proceedings Paper

Superlinear photoluminescence and vertical transport of photoexcited carriers in modulation-doped heterojunctions
Author(s): Jinxi Shen; R. Pittini; Kai Shum; W. Ossau; Yasuo Oka
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Paper Abstract

We verify the validity of the optical characterization of the 2D electron gas confined in modulation doped (GaAl)/As/GaAs heterojunctions designed for both high electron mobility devices. The properties of the 2D electron gas are evaluated from the magneto photoluminescence and the microwave influenced photoluminescence detected on the GaAs excitons in the flat band region. We evaluate the electron density and mobility from the oscillation of the photoluminescence intensity in a magnetic field, and the effective mass from the resonant change of the PL intensity under additional microwave radiation. We attribute these non-linear optical properties to the vertical transport and the bimolecular exciton formation of photoexcited carriers. We proved these specific transport and exciton formation processes by time-resolved photoluminescence experiments, where an extremely long exciton formation time and a strong signal of anti-stokes emissions under resonant excitations are observed. Furthermore, we realized a significant amplification of the photoluminescence intensity by exciting the heterojunction with two temporarily delayed laser pulses. The amplification of the luminescence intensity reflects unambiguously the recycling through the bimolecular exciton formation of the photo-excited carriers accumulated in the flat band region after vertical transport.

Paper Details

Date Published: 28 March 2000
PDF: 15 pages
Proc. SPIE 3940, Ultrafast Phenomena in Semiconductors IV, (28 March 2000); doi: 10.1117/12.381473
Show Author Affiliations
Jinxi Shen, Tohoku Univ. (Japan) and Japan Science and Technology Corp. (Japan)
R. Pittini, Tohoku Univ. (Japan) and Japan Science and Technology Corp. (Japan)
Kai Shum, CUNY/City College (United States)
W. Ossau, Univ. Wuerzburg (Germany)
Yasuo Oka, Tohoku Univ. (Japan) and Japan Science and Technology Corp. (Japan)

Published in SPIE Proceedings Vol. 3940:
Ultrafast Phenomena in Semiconductors IV
Kong-Thon F. Tsen; Jin-Joo Song, Editor(s)

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