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Proceedings Paper

Femtosecond pump-probe and four-wave mixing studies of excitons in GaN
Author(s): Young-Dahl Jho; Dai-sik Kim; Arthur J. Fischer; Jin-Joo Song; J. Kenrow; K. El Sayed; Christopher J. Stanton
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Paper Abstract

Femtosecond pump-probe (P-P) and four-wave mixing (FWM) experiments were performed simultaneously at 11 K on gallium nitride epilayers to study the initial temporal line-shapes of the exciton. A-B exciton beats were found in both P-P and FWM experiments near the exciton resonance. However, the differential reflection spectra showed a much slower rise time that persisted at longer negative time delay than the FWM signal or differential transition spectra at the exciton resonance. A numerical solution of a six band semiconductor Bloch equation model including all Hartree Fock nonlinearities shows that this slow rise results from excitation induced dephasing, that is, the strong density dependence of the dephasing time which changes with the laser excitation energy.

Paper Details

Date Published: 28 March 2000
PDF: 8 pages
Proc. SPIE 3940, Ultrafast Phenomena in Semiconductors IV, (28 March 2000); doi: 10.1117/12.381469
Show Author Affiliations
Young-Dahl Jho, Seoul National Univ. (South Korea)
Dai-sik Kim, Seoul National Univ. (South Korea)
Arthur J. Fischer, Oklahoma State Univ. (United States)
Jin-Joo Song, Oklahoma State Univ. (United States)
J. Kenrow, Univ. of Florida (United States)
K. El Sayed, Univ. of Florida (United States)
Christopher J. Stanton, Univ. of Florida (United States)


Published in SPIE Proceedings Vol. 3940:
Ultrafast Phenomena in Semiconductors IV
Kong-Thon F. Tsen; Jin-Joo Song, Editor(s)

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