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Proceedings Paper

Raman studies of the decay of the longitudinal optical phonons in wurtzite GaN and AlxGa1-xN
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Paper Abstract

Decay of the longitudinal optical (LO) phonons in wurtzite GaN and AlxGa1-xN (x equals 0.1) has been studied by subpicosecond time-resolved Raman spectroscopy. In contrast to the usually-believed 2LA decay channel for LO phonons in other semiconductors, our experimental results show that, among the various possible decay channels, the LO phonons in wurtzite GaN and AlxGa1-xN (x equals 0.1) decay primarily into a large wavevector TO and a large wavevector LA or TA phonons. These experimental results are consistent with the recent theoretical calculations of the phonon dispersion curves.

Paper Details

Date Published: 28 March 2000
PDF: 9 pages
Proc. SPIE 3940, Ultrafast Phenomena in Semiconductors IV, (28 March 2000); doi: 10.1117/12.381468
Show Author Affiliations
Kong-Thon F. Tsen, Arizona State Univ. (United States)
David K. Ferry, Arizona State Univ. (United States)
Stephen M. Goodnick, Arizona State Univ. (United States)
A. Salvador, Virginia Commonwealth Univ. (United States)
Hadis Morkoc, Virginia Commonwealth Univ. (United States)


Published in SPIE Proceedings Vol. 3940:
Ultrafast Phenomena in Semiconductors IV
Kong-Thon F. Tsen; Jin-Joo Song, Editor(s)

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