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Proceedings Paper

Monte Carlo simulation of photoexcited electrons in AIN
Author(s): Mohamed A. Osman
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Paper Abstract

We have examined the ultrafast relaxation of electrons photoexcited by infrared laser pulses in AlN using ensemble Monte Carlo approach. The effects of doping, excitation levels, energy, and pulse duration were investigated. It is found that even at excitation energies above the G-U separation, the role of intervalley scattering is weaker compared to polar optical scattering. This is more significant at longer pulse duration.

Paper Details

Date Published: 28 March 2000
PDF: 6 pages
Proc. SPIE 3940, Ultrafast Phenomena in Semiconductors IV, (28 March 2000); doi: 10.1117/12.381466
Show Author Affiliations
Mohamed A. Osman, Washington State Univ. (United States)

Published in SPIE Proceedings Vol. 3940:
Ultrafast Phenomena in Semiconductors IV
Kong-Thon F. Tsen; Jin-Joo Song, Editor(s)

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