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Proceedings Paper

Femtosecond spectroscopy in doped GaN
Author(s): Hong Ye; Gary W. Wicks; Philippe M. Fauchet
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Paper Abstract

A hot carrier relaxation dynamics are studied in both n-type and p-type GaN films grown on sapphire by molecular beam epitaxy. A novel femtosecond pump-probe technique is used in which the carriers are excited by an infrared pump and the carrier dynamics are monitored by a tunable near UV probe. Complex transients, showing bleaching and induced absorption, are observed in both samples. The electron dynamics are fitted by a model in which the LO-phonon emission is the dominant energy relaxation process. The hole dynamics also have been discussed and compared to the electron dynamics. Hot phonon effects seem play a major role to reduce the effective strength of the carrier-LO phonon scattering rate in both cases.

Paper Details

Date Published: 28 March 2000
PDF: 11 pages
Proc. SPIE 3940, Ultrafast Phenomena in Semiconductors IV, (28 March 2000); doi: 10.1117/12.381464
Show Author Affiliations
Hong Ye, Univ. of Rochester (United States)
Gary W. Wicks, Univ. of Rochester (United States)
Philippe M. Fauchet, Univ. of Rochester (United States)


Published in SPIE Proceedings Vol. 3940:
Ultrafast Phenomena in Semiconductors IV
Kong-Thon F. Tsen; Jin-Joo Song, Editor(s)

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