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Proceedings Paper

Exciton localization dynamics in AlxGa1-xN alloys
Author(s): Hyeon Soo Kim; Robin A. Mair; Jing Li; Jing Yu Lin; Hongxing Jiang
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Paper Abstract

The optical properties of AlxGa1-xN alloys with x varied from 0 to 0.35 have been investigated by picosecond time-resolved photoluminescence (PL) spectroscopy. Our results revealed that while the PL intensity decreases with an increase of Al-content, the low temperature PL decay lifetime increases with Al-content. These results can be understood in terms of the effects of tail states in the density of states due to alloy fluctuation in the AlxGa1-xN alloys. The Al content dependence of the energy tail state distribution parameter, E0, which is an important parameter for determining optical and electrical properties of the AlGaN alloys, has been obtained experimentally. The PL decay lifetime increases with the localization energy and consequently increases with Al content. The implications of our findings to III-nitride optoelectronic device applications are also discussed.

Paper Details

Date Published: 28 March 2000
PDF: 6 pages
Proc. SPIE 3940, Ultrafast Phenomena in Semiconductors IV, (28 March 2000); doi: 10.1117/12.381453
Show Author Affiliations
Hyeon Soo Kim, Kansas State Univ. (United States)
Robin A. Mair, Kansas State Univ. (United States)
Jing Li, Kansas State Univ. (United States)
Jing Yu Lin, Kansas State Univ. (United States)
Hongxing Jiang, Kansas State Univ. (United States)


Published in SPIE Proceedings Vol. 3940:
Ultrafast Phenomena in Semiconductors IV
Kong-Thon F. Tsen; Jin-Joo Song, Editor(s)

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