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Proceedings Paper

Phonons, electron-phonon interactions, and phonon-phonon interactions in III-V nitrides
Author(s): Leah Bergman; Mitra Dutta; Ki Wook Kim; Paul G. Klemens; Sergiy Mikhailovich Komirenko; Michael A. Stroscio
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Paper Abstract

Fundamental properties of phonons in III-V nitrides are examined with a view toward understanding processes important in the operation of III-V nitride devices. Firstly, confined, interface and propagating modes in wurtzite quantum wells are described in terms of Loudon's model for uniaxial semiconductors and the dielectric continuum model. Basic properties of the phonon modes and carrier-phonon interactions are considered in the basis of this treatment of dimensionally-confined phonons in wurtzite structures. A key feature of these phonon modes is their enhanced dispersion and its origin from the non-isotropic nature of the wurtzites. As will be discussed, this dispersion has important consequences for phonon propagation and phonon energy spectra. Secondly, the second-order phonon decay process of combined point defect scattering and anharmonic decay is examined as a means of estimating line broadening associated with the decay of phonons in III-V nitrides of wurtzite structure containing point defects. Thirdly, an analysis of Raman linewidths measured for AlN and GaN wurtzites is made to estimate phonon lifetimes.

Paper Details

Date Published: 28 March 2000
PDF: 12 pages
Proc. SPIE 3940, Ultrafast Phenomena in Semiconductors IV, (28 March 2000); doi: 10.1117/12.381450
Show Author Affiliations
Leah Bergman, North Carolina State Univ. (United States)
Mitra Dutta, Army Research Lab. and North Carolina State Univ. (United States)
Ki Wook Kim, North Carolina State Univ. (United States)
Paul G. Klemens, Univ. of Connecticut (United States)
Sergiy Mikhailovich Komirenko, North Carolina State Univ. (United States)
Michael A. Stroscio, Army Research Lab. and North Carolina State Univ. (United States)


Published in SPIE Proceedings Vol. 3940:
Ultrafast Phenomena in Semiconductors IV
Kong-Thon F. Tsen; Jin-Joo Song, Editor(s)

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