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Proceedings Paper

267-W cw AlGaAs/GaInAs diode laser bars
Author(s): Juergen Braunstein; Michael Mikulla; Rudolf Kiefer; Martin Walther; Juergen Jandeleit; Wolfgang Brandenburg; Peter Loosen; Reinhart Poprawe; Guenter Weimann
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Paper Abstract

High-power 980 nm-diode laser bars have been fabricated in the AlGaAs/GaInAs material system. The bars are 1 cm wide and comprise 25 broad area lasers with 200 micrometer aperture and 2 mm resonator length. Hence, the fill factor is 50%. To reduce the power density at the facet, we used an LOC structure with low modal gain, which also helps to prevent filamentation. The measured threshold current was 14 A and a record output power of 267 W cw was achieved at 333 A with an electro-optical conversion efficiency of 40%. With less thermal load, at 150 W output power the conversion efficiency was as high as 50% and the corresponding slope efficiency was 0.9 W/A. Microchannel copper heat sinks with a thermal resistance of less than 0.29 K/W were used for mounting the bars. The coolant temperature was set for all measurements to 22 degrees Celsius and the flux was 0.9 l/min. Additionally, the top electrode of the p-side down mounted bars was cooled by a second heat sink, which was pressed gently on the top electrode.

Paper Details

Date Published: 29 March 2000
PDF: 6 pages
Proc. SPIE 3945, Laser Diodes and LEDs in Industrial, Measurement, Imaging, and Sensors Applications II; Testing, Packaging, and Reliability of Semiconductor Lasers V, (29 March 2000); doi: 10.1117/12.380551
Show Author Affiliations
Juergen Braunstein, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Michael Mikulla, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Rudolf Kiefer, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Martin Walther, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Juergen Jandeleit, Fraunhofer-Institut fuer Lasertechnik (United States)
Wolfgang Brandenburg, Fraunhofer-Institut fuer Lasertechnik (Germany)
Peter Loosen, Fraunhofer-Institut fuer Lasertechnik (Germany)
Reinhart Poprawe, Fraunhofer-Institut fuer Lasertechnik (Germany)
Guenter Weimann, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)


Published in SPIE Proceedings Vol. 3945:
Laser Diodes and LEDs in Industrial, Measurement, Imaging, and Sensors Applications II; Testing, Packaging, and Reliability of Semiconductor Lasers V
Geoffrey T. Burnham; S. C. Wang; Geoffrey T. Burnham; Xiaoguang He; Kurt J. Linden; S. C. Wang, Editor(s)

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