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Proceedings Paper

Al-free 950-nm BA diode lasers with high efficiency and reliability at 50 degrees C ambient temperature
Author(s): Goetz Erbert; Gerhard Beister; Arne Knauer; Juergen Maege; Wolfgang Pittroff; Peter Ressel; Juergen Sebastian; R. Staske; Hans Wenzel; Marcus Weyers; Guenther Traenkle
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Paper Abstract

We report device properties and results of lifetime tests for Al-free InGaAs/InGaAsP/InGaP broad-area (BA) laser diodes, emitting at 950 nm. The epitaxial layers were grown by metal organic vapor phase epitaxy (MOVPE). The mounted diode lasers have a high wallplug efficiency around 60%, for a resonator length of 2 mm, and about 50% for 4 mm long devices due to low threshold current densities of jth equals 110 . . . 140 A/cm2, high slope efficiencies of 75% and the typical low series resistance of the Al-free material. The lasers were mounted on copper heatsinks, episide-down as well as episide- up. Lifetime tests were performed with a facet load of 15 mW/micrometers at temperatures between 25 degrees Celsius and 70 degrees Celsius and with a facet load of 20 mW/micrometers at 25 degrees Celsius. All diodes survived 3000 h with degradation rates lower than 6 X 10-5h-1 at 50 degrees Celsius and 1 X 10-4h-1 at 70 degrees Celsius as well as 2000 h with a low degradation rates of 2 X 10-5h-1 at 20 mW/micrometer. As far we know, the results belong to the best ones reported until now for Al-free BA laser diodes.

Paper Details

Date Published: 29 March 2000
PDF: 7 pages
Proc. SPIE 3945, Laser Diodes and LEDs in Industrial, Measurement, Imaging, and Sensors Applications II; Testing, Packaging, and Reliability of Semiconductor Lasers V, (29 March 2000); doi: 10.1117/12.380547
Show Author Affiliations
Goetz Erbert, Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik (Germany)
Gerhard Beister, Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik (Germany)
Arne Knauer, Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik (Germany)
Juergen Maege, Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik (Germany)
Wolfgang Pittroff, Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik (Germany)
Peter Ressel, Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik (Germany)
Juergen Sebastian, Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik (Germany)
R. Staske, Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik (Germany)
Hans Wenzel, Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik (Germany)
Marcus Weyers, Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik (Germany)
Guenther Traenkle, Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik (Germany)


Published in SPIE Proceedings Vol. 3945:
Laser Diodes and LEDs in Industrial, Measurement, Imaging, and Sensors Applications II; Testing, Packaging, and Reliability of Semiconductor Lasers V
Geoffrey T. Burnham; S. C. Wang; Geoffrey T. Burnham; Xiaoguang He; Kurt J. Linden; S. C. Wang, Editor(s)

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