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Proceedings Paper

Raman probe of new laser materials GaAs1-xBixand InAs1-xBix
Author(s): Prabhat Verma; Martin Herms; Gert Irmer; Masayoshi Yamada; Hiroshi Okamoto; Kunishige Oe
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Paper Abstract

Inclusion of a small amount of Bi in InAs and GaAs changes the temperature dependent behavior of the band gap. Both InAs1- xBix and GaAs1-xBix tend to have temperature insensitive band gap with increasing Bi content. Raman scattering has been performed on the epilayers of InAs1- xBix and GaAs1-xBix compounds grown by MOVPE technique for varying Bi content. Good single crystalline growth with spatial homogeneity was confirmed using micro- Raman technique. Vibrational modes of InBi and GaBi were observed in the two materials, respectively. In addition, vibrational modes corresponding to Bi and phonon-plasmon coupled modes were also observed. Experimental results indicate that Bi atoms homogeneously replace some of the As atoms in both InAs as well as in GaAs to provide good crystalline structures of InAs1-xBix and GaAs1- xBix compounds, respectively.

Paper Details

Date Published: 29 March 2000
PDF: 6 pages
Proc. SPIE 3945, Laser Diodes and LEDs in Industrial, Measurement, Imaging, and Sensors Applications II; Testing, Packaging, and Reliability of Semiconductor Lasers V, (29 March 2000); doi: 10.1117/12.380534
Show Author Affiliations
Prabhat Verma, Kyoto Institute of Technology (Japan)
Martin Herms, Fraunhofer-Institut of Nondestructive Testing (Germany)
Gert Irmer, Technische Univ. Frieberg (Germany)
Masayoshi Yamada, Kyoto Institute of Technology (Japan)
Hiroshi Okamoto, NTT Optoelectronic Labs. (Japan)
Kunishige Oe, Kyoto Institute of Technology (Japan)


Published in SPIE Proceedings Vol. 3945:
Laser Diodes and LEDs in Industrial, Measurement, Imaging, and Sensors Applications II; Testing, Packaging, and Reliability of Semiconductor Lasers V
Geoffrey T. Burnham; Xiaoguang He; Kurt J. Linden; S. C. Wang; S. C. Wang; Geoffrey T. Burnham, Editor(s)

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