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Proceedings Paper

Light-emitting diodes fabricated in silicon/iron disilicide
Author(s): Adrian K. Kewell; Manon A. Lourenco; Russell M. Gwilliam; Jane Sharpe; C. McKinty; Thomas R. Butler; Karen J. Reeson Kirkby; Kevin P. Homewood
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Paper Abstract

Attempts to obtain electroluminescence from silicon-based devices have been largely frustrated by the indirect bandgap of the semiconductor. One approach, described here, is to fabricate a direct bandgap material which is compatible with silicon processing and which can then be excited via standard carrier injection across p-n junctions. We have used ion implantation of iron, typically at an energy of 180 keV and a dose of 1.5 X 1016 cm-2, conditions which are easily achievable in modern commercial implanters, to form precipitates of (beta) -iron disilicide, which has a direct bandgap of 0.8 eV. At 80 K and under forward bias conditions, the devices emit light at 1.5 micrometers with an external quantum efficiency of 5 X 10-3, and emission at room temperature has been observed. The emission lifetime has been placed at shorter than 60 ns, as expected of a direct bandgap material. Results will be presented showing how the electroluminescence properties change with the dose of implanted iron.

Paper Details

Date Published: 15 March 2000
PDF: 9 pages
Proc. SPIE 3953, Silicon-based Optoelectronics II, (15 March 2000); doi: 10.1117/12.379615
Show Author Affiliations
Adrian K. Kewell, Univ. of Surrey (United Kingdom)
Manon A. Lourenco, Univ. of Surrey (United Kingdom)
Russell M. Gwilliam, Univ. of Surrey (United Kingdom)
Jane Sharpe, Univ. of Surrey (United Kingdom)
C. McKinty, Univ. of Surrey (United Kingdom)
Thomas R. Butler, Univ. of Surrey (United Kingdom)
Karen J. Reeson Kirkby, Univ. of Surrey (United Kingdom)
Kevin P. Homewood, Univ. of Surrey (United Kingdom)


Published in SPIE Proceedings Vol. 3953:
Silicon-based Optoelectronics II
David J. Robbins; Derek C. Houghton, Editor(s)

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