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Proceedings Paper

Ge-on-Si high-responsivity near-infrared photodetectors
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Paper Abstract

We report the fabrication of fast heterojunction Ge/Si photodetectors which, to the best of our knowledge, exhibit the highest near infrared responsivity at normal incidence reported to date. Such performances are related to the quality of the epitaxial Ge film grown by a two-step UHV-CVD process followed by cyclic thermal annealing. We have measured a fast (FWHM equals 850 ps at 1.3 micrometers ) and efficient (R equals 0.55 A/W at 1.3 micrometers and 0.25 A/W at 1.55 micrometers ) photoresponse. Our technology makes these devices suitable for integration with other electronic and optoelectronic components on Si chips. In the paper we discuss processing technology, material quality, device fabrication and performance measurements.

Paper Details

Date Published: 15 March 2000
PDF: 7 pages
Proc. SPIE 3953, Silicon-based Optoelectronics II, (15 March 2000); doi: 10.1117/12.379609
Show Author Affiliations
Gianlorenzo Masini, INFM and Univ. degli Studi di Roma Tre (Italy)
Lorenzo Colace, INFM and Univ. degli Studi di Roma Tre (Italy)
Gaetano Assanto, INFM and Univ. degli Studi di Roma Tre (Italy)
Hsin-Chiao Luan, Massachusetts Institute of Technology (United States)
Kazumi Wada, Massachusetts Institute of Technology (United States)
Lionel C. Kimerling, Massachusetts Institute of Technology (United States)


Published in SPIE Proceedings Vol. 3953:
Silicon-based Optoelectronics II
David J. Robbins; Derek C. Houghton, Editor(s)

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