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Proceedings Paper

Avalanche multiplication and noise in submicron Si p-i-n diodes
Author(s): Chee Hing Tan; John P. R. David; J. Clark; Graham J. Rees; S. A. Plimmer; David J. Robbins; David C. Herbert; Roger Timothy Carline; Weng Y. Leong
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Paper Abstract

We have measured avalanche multiplication and noise in Si p- i-n diodes with avalanche widths, w, of 0.12 micrometers , 0.18 micrometers and 0.32 micrometers , both for pure electron and mixed carrier injection. Multiplication and excess noise measurements were also performed with hole injection on a n+-i-p+ diode with w equals 0.84 micrometers . Pure electron initiated avalanche noise results were found to be almost indistinguishable in all three layers. The excess noise factor increases dramatically with increasing w when the injection is mixed.

Paper Details

Date Published: 15 March 2000
PDF: 8 pages
Proc. SPIE 3953, Silicon-based Optoelectronics II, (15 March 2000); doi: 10.1117/12.379602
Show Author Affiliations
Chee Hing Tan, Univ. of Sheffield (United Kingdom)
John P. R. David, Univ. of Sheffield (United Kingdom)
J. Clark, Univ. of Sheffield (United Kingdom)
Graham J. Rees, Univ. of Sheffield (United Kingdom)
S. A. Plimmer, Univ. of Sheffield (United Kingdom)
David J. Robbins, Defence Evaluation and Research Agency Malvern (United Kingdom)
David C. Herbert, Defence Evaluation and Research Agency Malvern (United Kingdom)
Roger Timothy Carline, Defence Evaluation and Research Agency Malvern (United Kingdom)
Weng Y. Leong, Defence Evaluation and Research Agency Malvern (United Kingdom)


Published in SPIE Proceedings Vol. 3953:
Silicon-based Optoelectronics II
David J. Robbins; Derek C. Houghton, Editor(s)

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