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Proceedings Paper

Near-infrared wavemeter based on an array of polycrystalline Ge-on-Si photodetectors
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Paper Abstract

We report on a novel solid state wavelength meter in the near infrared. The device is an array of six photodetectors based on polycrystalline germanium film evaporated on a silicon substrate and each element is a wavelength sensitive detector. We describe the design, the fabrication and the characterization of such device and we demonstrate its capability in the measurement of the wavelength of quasi- monochromatic light beams.

Paper Details

Date Published: 15 March 2000
PDF: 7 pages
Proc. SPIE 3953, Silicon-based Optoelectronics II, (15 March 2000); doi: 10.1117/12.379601
Show Author Affiliations
Gianlorenzo Masini, INFM and Univ. degli Studi di Roma Tre (Italy)
Lorenzo Colace, INFM and Univ. degli Studi di Roma Tre (Italy)
Gaetano Assanto, INFM and Univ. degli Studi di Roma Tre (Italy)


Published in SPIE Proceedings Vol. 3953:
Silicon-based Optoelectronics II
David J. Robbins; Derek C. Houghton, Editor(s)

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