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Proceedings Paper

MOS transistor microscopic analysis
Author(s): George Stoenescu; N. Baltateanu
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Paper Abstract

Our paper studies the influence of the irradiation by fast electrons on the characteristic properties and microscopic parameters of certain MOSFET transistors with p-induced channel. Using the experimental data, an appropriate theoretic model and an optimization method, the following specific parameters were computed for the irradiated and un- irradiated samples: the electron mobility, the Fermi energy value, as well as the saturation voltage and the changing of the drain channel length.

Paper Details

Date Published: 23 February 2000
PDF: 6 pages
Proc. SPIE 4068, SIOEL '99: Sixth Symposium on Optoelectronics, (23 February 2000); doi: 10.1117/12.378707
Show Author Affiliations
George Stoenescu, Univ. of Craiova (Romania)
N. Baltateanu, Hyperion Institute for Research and Development (Romania)


Published in SPIE Proceedings Vol. 4068:
SIOEL '99: Sixth Symposium on Optoelectronics
Teodor Necsoiu; Maria Robu; Dan C. Dumitras, Editor(s)

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