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Proceedings Paper

Influence of the precrystallization zone on the dopant field in microgravity
Author(s): Agneta M. Balint; Diana G. Baltean; Monica Mihailovici; Adrian Neculae; Stefan Balint
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Paper Abstract

In this paper we present the computed dopant field in the neighborhood of the melt/solid interface in the case of Bridgman-Stockbarger semiconductor crystal growth system in microgravity. The computation is made in quasi-steady state approximation for crystal and melt with thermophysical properties similar to those of gallium-doped germanium, using the 'precrystallization-zone' model. In the quasi- steady state approximation the translation of the ampoule is replaced by supplying melt into the ampoule with velocity V1 and removing crystal at the other end of the ampoule at the rate Vs equals V1. The 'precrystallization-zone' is considered to be a thin layer masking the crystal in which exists a periodical microstructure created by the periodical structure of the crystal which governs the arranging of the own atoms into a specific crystalline lattice. In fact, in this layer we have periodically distributed places which are not available for the dopant. Using this approximation and model, we find relevant radial segregation due to the precrystallization-zone. We also find that reducing the diameter of the rod a lower radial segregation appears. Therefore the influence of the precrystallization-zone is relevant even in microgravity and there is no reason to ignore this zone in general.

Paper Details

Date Published: 23 February 2000
PDF: 12 pages
Proc. SPIE 4068, SIOEL '99: Sixth Symposium on Optoelectronics, (23 February 2000); doi: 10.1117/12.378692
Show Author Affiliations
Agneta M. Balint, Univ. of the West Timisoara (Romania)
Diana G. Baltean, Univ. of the West Timisoara (Romania)
Monica Mihailovici, Univ. of the West Timisoara (Romania)
Adrian Neculae, Univ. of the West Timisoara (Romania)
Stefan Balint, Univ. of the West Timisoara (Romania)

Published in SPIE Proceedings Vol. 4068:
SIOEL '99: Sixth Symposium on Optoelectronics
Teodor Necsoiu; Maria Robu; Dan C. Dumitras, Editor(s)

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