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Proceedings Paper

Plasma analysis in the process of pulsed laser deposition of aluminium nitride and titan nitride thin films
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Paper Abstract

Reactive pulsed laser ablation deposition of thin films is a technique which has already given good results for the formation of metal and semiconductor oxide and nitride films. To improve the quality of the deposited films it is important to understand the ablation process and the materials transport phenomena from the target to the collecting substrate. Optical emission spectroscopy of the plasma plume, formed by the interaction of the laser pulse with the target is generally used to try to understand the reaction mechanisms during the transport process. An eight speed camera was also used to determine plasma plume expansion velocity and the total duration of luminous emission of the plume. The effect of ambient pressure in the ablation chamber on the plasma composition was observed.

Paper Details

Date Published: 23 February 2000
PDF: 6 pages
Proc. SPIE 4068, SIOEL '99: Sixth Symposium on Optoelectronics, (23 February 2000); doi: 10.1117/12.378674
Show Author Affiliations
Constantin Grigoriu, National Institute for Laser, Plasma and Radiation Physics (Romania)
Ileana Apostol, National Institute for Laser, Plasma and Radiation Physics (Romania)
Roxana Rizea, National Institute for Laser, Plasma and Radiation Physics (Romania)
Aurelian Marcu, National Institute for Laser, Plasma and Radiation Physics (Romania)
Dumitru Dragulinescu, National Institute for Laser, Plasma and Radiation Physics (Romania)


Published in SPIE Proceedings Vol. 4068:
SIOEL '99: Sixth Symposium on Optoelectronics
Teodor Necsoiu; Maria Robu; Dan C. Dumitras, Editor(s)

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