Share Email Print
cover

Proceedings Paper

Indium antimonide semiconductor material preparation for thermoelectric applications
Author(s): Mariana Simion; Anca I. Stanculescu; Maria Tilica; Mihaela Vasilescu
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Some of the III-V compounds such as InSb, InAs, In As1-xPx, have high thermal conductivity very high mobility of electrons and low effective masses. Their figures of merit being high enough they are useful materials. For thermoelectric materials, the high mobility of electronics is a very important factor.

Paper Details

Date Published: 23 February 2000
PDF: 6 pages
Proc. SPIE 4068, SIOEL '99: Sixth Symposium on Optoelectronics, (23 February 2000); doi: 10.1117/12.378651
Show Author Affiliations
Mariana Simion, MATPUR SA (Romania)
Anca I. Stanculescu, MATPUR SA (Romania)
Maria Tilica, BIOTEHNOS SA (Romania)
Mihaela Vasilescu, BIOTEHNOS SA (Romania)


Published in SPIE Proceedings Vol. 4068:
SIOEL '99: Sixth Symposium on Optoelectronics

© SPIE. Terms of Use
Back to Top