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Proceedings Paper

InGaAsP/AlGaAs multiple-wavelength vertical-cavity lasers and arrays in the 1.5-um band fabricated by localized wafer fusion technique
Author(s): Alexei V. Syrbu; Vladimir P. Iakovlev; Alok P. Rudra; Claude-Albert Berseth; Eli E. Kapon; Alexandru Z. Mereuta; Isabelle Sagnes; Abdallah Ougazzaden
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Paper Abstract

We have demonstrated InGaAsP/AlGaAs double fused 1.5 micrometers multiple wavelength vertical cavity lasers and arrays in which element definition is obtained by localized fusion. Laser elements emit in continuous wave under electrical and optical pumping. Multiple wavelength single element VCSELs have been fabricated in the same batch taking advantage of layer thickness nonuniformity of InGaAsP/InP material close to the edge of the wafer. To obtain multiple wavelength arrays a controllable cavity length variation using anodic oxidation has been performed. The wavelength span in an 8 by 1 laser array is 10 nm. Single mode operation with more than of 40 dB side mode suppression ratio is characteristic for laser elements in the array.

Paper Details

Date Published: 23 February 2000
PDF: 4 pages
Proc. SPIE 4068, SIOEL '99: Sixth Symposium on Optoelectronics, (23 February 2000); doi: 10.1117/12.378630
Show Author Affiliations
Alexei V. Syrbu, Swiss Federal Institute of Technology Lausanne (Switzerland)
Vladimir P. Iakovlev, Swiss Federal Institute of Technology Lausanne (Switzerland)
Alok P. Rudra, Swiss Federal Institute of Technology Lausanne (Switzerland)
Claude-Albert Berseth, Swiss Federal Institute of Technology Lausanne (Switzerland)
Eli E. Kapon, Swiss Federal Institute of Technology Lausanne (Switzerland)
Alexandru Z. Mereuta, France Telecom-CNET (Moldova)
Isabelle Sagnes, France Telecom-CNET (France)
Abdallah Ougazzaden, France Telecom-CNET (United States)


Published in SPIE Proceedings Vol. 4068:
SIOEL '99: Sixth Symposium on Optoelectronics
Teodor Necsoiu; Maria Robu; Dan C. Dumitras, Editor(s)

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