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Proceedings Paper

Carbon nitride coherently grown on Si (111) substrates by pulsed laser irradiation
Author(s): G. Barucca; Guiseppe Majni; Paolo Mengucci; Gilberto Leggieri; Armando Luches; Maurizio Martino; Alessio Perrone
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Paper Abstract

Carbon nitride films were deposited on Si substrates at room temperature by XeCl laser ablation of graphite targets in low pressure N2 atmosphere at the fluence of 12 J/cm2. The films have been submitted to x-ray diffraction and transmission electron microscopy investigations in order to study the structure of the films. Results showed that the samples are constituted of a continuous amorphous film inside which microcrystals are dispersed. A new CNx phase has been identified. This new phase has a triclinic crystallographic cell with lattice parameters a equals b equals 0.384 nm, c equals 0.438 +/- 0.007 nm, (alpha) equals 110 +/- 1 degrees, (beta) equals 105 +/- 1 degrees, and (gamma) equals 120 degrees. It coherently grows on the Si plane with the following orientation relationships: (001)CNx (parallel) (111)Si; (100)CNx (parallel) (1-10)Si and (010)CNx (parallel) (01-1)Si.

Paper Details

Date Published: 25 February 2000
PDF: 8 pages
Proc. SPIE 4070, ALT '99 International Conference on Advanced Laser Technologies, (25 February 2000); doi: 10.1117/12.378165
Show Author Affiliations
G. Barucca, INFM and Univ. degli Studi di Ancona (Italy)
Guiseppe Majni, INFM and Univ. degli Studi di Ancona (Italy)
Paolo Mengucci, INFM and Univ. degli Studi di Ancona (Italy)
Gilberto Leggieri, INFM and Univ. degli Studi di Lecce (Italy)
Armando Luches, INFM and Univ. degli Studi di Lecce (Italy)
Maurizio Martino, INFM and Univ. degli Studi di Lecce (Italy)
Alessio Perrone, INFM and Univ. degli Studi di Lecce (Italy)


Published in SPIE Proceedings Vol. 4070:
ALT '99 International Conference on Advanced Laser Technologies
Vladimir I. Pustovoy; Vitali I. Konov, Editor(s)

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