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Proceedings Paper

Parametric studies of carbon nitride thin films deposited by reactive pulsed laser ablation
Author(s): S. Acquaviva; Emilia D'Anna; M. L. De Giorgi; Gilberto Leggieri; Armando Luches; Maurizio Martino; Alessio Perrone; A. Zocco; G. Barucca; Paolo Mengucci
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Paper Abstract

We report on parametric studies of CNx films deposited by excimer laser ablation of graphite targets in molecular nitrogen atmosphere as a function of gas pressure and laser fluence values. Substrates were Si single crystals at room temperature. Deposition rates decrease with increasing nitrogen pressure. The N/C atomic ratio generally increases with increasing nitrogen pressure and laser fluence, N atoms are mainly bonded to C atoms in the sp2 and sp3 bonding states. At relatively high pressure and laser fluences about 40 percent of the C atoms and about 50 percent of the N atoms are bounded in the C-N single bonds, generally attributed to the (beta) -C3N4 compound.

Paper Details

Date Published: 25 February 2000
PDF: 6 pages
Proc. SPIE 4070, ALT '99 International Conference on Advanced Laser Technologies, (25 February 2000); doi: 10.1117/12.378158
Show Author Affiliations
S. Acquaviva, Univ. of Lecce and INFM (Italy)
Emilia D'Anna, Univ. of Lecce and INFM (Italy)
M. L. De Giorgi, Univ. of Lecce and INFM (Italy)
Gilberto Leggieri, Univ. of Lecce and INFM (Italy)
Armando Luches, Univ. of Lecce and INFM (Italy)
Maurizio Martino, Univ. of Lecce and INFM (Italy)
Alessio Perrone, Univ. of Lecce and INFM (Italy)
A. Zocco, Univ. of Lecce and INFM (Italy)
G. Barucca, Univ. of Ancona and INFM (Italy)
Paolo Mengucci, Univ. of Ancona and INFM (Italy)


Published in SPIE Proceedings Vol. 4070:
ALT '99 International Conference on Advanced Laser Technologies
Vladimir I. Pustovoy; Vitali I. Konov, Editor(s)

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