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Proceedings Paper

Unipolar semiconductor lasers on asymmetric quantum wells
Author(s): Yurii Aleshchenko; Vladimir Kapaev; Yurii Kopaev
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Paper Abstract

We propose the original design of an active element of quantum unipolar semiconductor laser both for the optical pumping and current injection modes of operation. The peculiarities of the posed design are strongly asymmetric barriers surrounding a double-well active element. The suppression of intersubband transitions to the lower working subband can be readily achieved if the transformation point of electronic state dimensionality for lower subband occurs at small momentum. By this means the population inversion conditions in this system can be easily realized. The results of photoluminescence studies of the individual elements of the proposed structure are presented.

Paper Details

Date Published: 25 February 2000
PDF: 6 pages
Proc. SPIE 4070, ALT '99 International Conference on Advanced Laser Technologies, (25 February 2000); doi: 10.1117/12.378147
Show Author Affiliations
Yurii Aleshchenko, P.N. Lebedev Physical Institute (Russia)
Vladimir Kapaev, P.N. Lebedev Physical Institute (Russia)
Yurii Kopaev, P.N. Lebedev Physical Institute (Russia)

Published in SPIE Proceedings Vol. 4070:
ALT '99 International Conference on Advanced Laser Technologies
Vladimir I. Pustovoy; Vitali I. Konov, Editor(s)

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