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Proceedings Paper

Investigation of semiconductor nanocrystals by Raman scattering
Author(s): Nikolay N. Melnik; T. N. Zavaritskaja; M. M. Rzaev; V. A. Karavanski; Vladimir A. Alekseev
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Paper Abstract

The spectra of Raman scattering and photoluminescence of porous Si, Ge, GaP and carbon nanocrystals are investigated at room temperature. The deduction that porous structures consist of isotropic nanoparticles, which have a crystalline kern is made. Using GaP as an example, it can be shown, that nanocrystals, obtained by an electrochemical etching have more perfect crystalline structure than the initial monocrystal. The interaction of phonon modes for nanocrystals create by an electrochemical etching of Si/GexSi1-x superlattices was observed. The intensive photoluminescence of graphite particles was observed.

Paper Details

Date Published: 18 February 2000
PDF: 5 pages
Proc. SPIE 4069, Raman Scattering, (18 February 2000); doi: 10.1117/12.378126
Show Author Affiliations
Nikolay N. Melnik, P.N. Lebedev Physical Institute (Russia)
T. N. Zavaritskaja, P.N. Lebedev Physical Institute (Russia)
M. M. Rzaev, P.N. Lebedev Physical Institute (Russia)
V. A. Karavanski, General Physics Institute (Russia)
Vladimir A. Alekseev, General Physics Institute (Russia)


Published in SPIE Proceedings Vol. 4069:
Raman Scattering

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