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Proceedings Paper

Effect of the external electric field on hyper-Raman scattering from metal-semiconductor ohmic contact
Author(s): G. Benedek; I. P. Ipatova; A. Yu. Maslov; L. V. Udod
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Paper Abstract

Hyper Raman Scattering (HRS) is considered as a convenient tool of studying the interface region of the metal- semiconductor contact. The effect of the band bending near the interface results sometimes in an accumulation of free carriers near the interface. The strong inhomogeneity is shown to induce local changes of the sign of the dielectric permittivity and in the consequent strong enhancement of the HRS intensity. The application of a bias potential is shown to govern the enhancement process.

Paper Details

Date Published: 18 February 2000
PDF: 6 pages
Proc. SPIE 4069, Raman Scattering, (18 February 2000); doi: 10.1117/12.378124
Show Author Affiliations
G. Benedek, INFM/Univ. degli Studi di Milano (Italy)
I. P. Ipatova, A.F. Ioffe Physical-Technical Institute (Russia)
A. Yu. Maslov, A.F. Ioffe Physical-Technical Institute (Russia)
L. V. Udod, A.F. Ioffe Physical-Technical Institute (Russia)

Published in SPIE Proceedings Vol. 4069:
Raman Scattering
Vladimir S. Gorelik; Anna D. Kudryavtseva, Editor(s)

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