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Proceedings Paper

Ion projection lithography: progress in mask and tool technology
Author(s): Albrecht Ehrmann; Rainer Kaesmaier; Thomas Struck
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Paper Abstract

Ion Projection Lithography is one of the major competitors for sub 100 nm-lithography. Within the MEDEA ion projection lithography project and other activities related to it, new results in mask and tool technology have been obtained. The exposure tool is in process of being assembled, so that information of the components as the multi-cusp ion source can be given. Results from the field-composable lens electrode manufacturing and of the off-axis alignment system are to be presented. Mask process technology has been improved by introduction of a multi-step trench etch technique. A stencil mask based on a 200 mm wafer has been produced. In addition, the repeatability values of placement and CD measurements have been decreased. Defect inspection with optical KLA tool results give information on the current limits for stencil mask applications.

Paper Details

Date Published: 3 February 2000
PDF: 8 pages
Proc. SPIE 3996, 16th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (3 February 2000); doi: 10.1117/12.377120
Show Author Affiliations
Albrecht Ehrmann, Infineon Technologies AG (Germany)
Rainer Kaesmaier, Infineon Technologies AG (Germany)
Thomas Struck, Infineon Technologies AG (Germany)


Published in SPIE Proceedings Vol. 3996:
16th European Conference on Mask Technology for Integrated Circuits and Microcomponents
Uwe F. W. Behringer, Editor(s)

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