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Proceedings Paper

Improving reticle yields with after develop inspection (ADI)
Author(s): Franklin D. Kalk; Keith J. Brankner; Laurie Peters; Anthony Vacca; Scott Pomeroy; David Emery
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Paper Abstract

In this study, After Develop Inspection was used to inspect Cr photomasks incorporating iP3600 and ZEP7000 resists at several thicknesses. The detected defects were analyzed and compared to defects found after etch. A test mask with programmed defects was also created and tested to characterize the sensitivity of this new capability.

Paper Details

Date Published: 3 February 2000
PDF: 9 pages
Proc. SPIE 3996, 16th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (3 February 2000); doi: 10.1117/12.377117
Show Author Affiliations
Franklin D. Kalk, DuPont Photomasks, Inc. (United States)
Keith J. Brankner, DuPont Photomasks, Inc. (United States)
Laurie Peters, Advanced Micro Devices, Inc. (United States)
Anthony Vacca, KLA-Tencor Corp. (United States)
Scott Pomeroy, KLA-Tencor Corp. (United States)
David Emery, KLA-Tencor Corp. (United States)


Published in SPIE Proceedings Vol. 3996:
16th European Conference on Mask Technology for Integrated Circuits and Microcomponents
Uwe F. W. Behringer, Editor(s)

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