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Proceedings Paper

Modified fused silica for 157-nm mask substrates
Author(s): Bruno Uebbing; Jan Vydra; Stephan Thomas; Ralf Takke
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Paper Abstract

The 1999 SIA roadmap predicts a severe acceleration of the reduction of feature sizes down to 100 nm in 2003 and further down to 70 nm in 2005, respectively. One of the most promising candidates to achieve this demanding goal is the 157 nm optical microlithography. But today there are still many uncertainties whether this technology will be ready in time for the semiconductor industry. The material for the mask substrates, for example is regarded as one of the potential showstoppers for this generation of optical microlithography. For present generations of optical microlithography (i-line, DUV and 193 nm) fused silica is the material of choice for mask substrates. Its superior mechanical, thermal and optical properties make it an ideal substrate material.

Paper Details

Date Published: 3 February 2000
PDF: 6 pages
Proc. SPIE 3996, 16th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (3 February 2000); doi: 10.1117/12.377111
Show Author Affiliations
Bruno Uebbing, Heraeus Quarzglas GmbH & Co. KG (Germany)
Jan Vydra, Heraeus Quarzglas GmbH & Co. KG (Germany)
Stephan Thomas, Heraeus Quarzglas GmbH & Co. KG (Germany)
Ralf Takke, Heraeus Quarzglas GmbH & Co. KG (Germany)


Published in SPIE Proceedings Vol. 3996:
16th European Conference on Mask Technology for Integrated Circuits and Microcomponents
Uwe F. W. Behringer, Editor(s)

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