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Proceedings Paper

Optical proximity effects in submicron photomask CD metrology
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Paper Abstract

Understanding how optical proximity effects (OPE) influence critical dimension (CD) measurements of photomasks and wafers in semiconductor manufacturing has been a subject of intense interest and investigation for many years. OPE, caused by the convolution of the intensity profiles of adjacent lines, introduces errors in the determination of the line edge position, and in turn the linewidth. This paper models several imaging systems using the Optical Transfer Function analysis method and discusses some results from an ongoing study to devise methods for calibrating CD mask metrology tools, and evaluates several different imaging objects and line measurement algorithms as to their sensitivity to the influences of OPE in the measurement of binary masks.

Paper Details

Date Published: 3 February 2000
PDF: 16 pages
Proc. SPIE 3996, 16th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (3 February 2000); doi: 10.1117/12.377105
Show Author Affiliations
Nicholas G. Doe, Zygo Corp. (United States)
Richard D. Eandi, Zygo Corp. (United States)

Published in SPIE Proceedings Vol. 3996:
16th European Conference on Mask Technology for Integrated Circuits and Microcomponents
Uwe F. W. Behringer, Editor(s)

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