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Proceedings Paper

Reticle imaging and metrology using a CD-SEM at IMEC
Author(s): A. James; F. Felten; M. Polli; Jonathan G. England; Thomas Marschner; Geert Vandenberghe
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Paper Abstract

Reticle imaging and metrology are becoming increasingly difficult as reticle features decrease in size. This paper describes some early results of top down CD-SEM reticle imaging and metrology carried out in association with the DUV and 193 nm lithography programs at IMEC. Images of reticle features and some corresponding printed wafer patterns are presented and CD-SEM and optical measurement techniques are compared.

Paper Details

Date Published: 3 February 2000
PDF: 6 pages
Proc. SPIE 3996, 16th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (3 February 2000); doi: 10.1117/12.377102
Show Author Affiliations
A. James, KLA-Tencor (United Kingdom)
F. Felten, KLA-Tencor (United Kingdom)
M. Polli, KLA-Tencor (United Kingdom)
Jonathan G. England, KLA-Tencor (United Kingdom)
Thomas Marschner, IMEC (Germany)
Geert Vandenberghe, IMEC (Belgium)


Published in SPIE Proceedings Vol. 3996:
16th European Conference on Mask Technology for Integrated Circuits and Microcomponents

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