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Proceedings Paper

Development of embedded attenuated phase-shifting mask (EAPSM) blanks for ArF lithography
Author(s): Hideaki Mitsui; Osamu Nozawa; Hitoshi Ohtsuka; Megumi Takeuchi; Hideo Kobayashi; Masao Ushida
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Paper Abstract

The embedded attenuated phase-shift mask (EAPSM) has been in practical use for i-line and deep UV lithography. In 193 nm lithography, too, the EAPSM is considered to be a promising resolution enhancement technique for its simple structure and fabrication process required. We at HOYA have attempted to extend the applicability of MoSi-based EAPSM blanks to 193 nm lithography, helping extend the life of the existing infrastructure for conventional EAPSM fabrication. We have completed tuning our new MoSi-based film for 193 nm lithography and characterized its optical properties, chemical durability, ArF laser exposure durability and mask- making process compatibility.

Paper Details

Date Published: 3 February 2000
PDF: 6 pages
Proc. SPIE 3996, 16th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (3 February 2000); doi: 10.1117/12.377098
Show Author Affiliations
Hideaki Mitsui, HOYA Corp. (Japan)
Osamu Nozawa, HOYA Corp. (Japan)
Hitoshi Ohtsuka, HOYA Corp. (Japan)
Megumi Takeuchi, HOYA Corp. (Japan)
Hideo Kobayashi, HOYA Corp. (Japan)
Masao Ushida, HOYA Corp. (Japan)

Published in SPIE Proceedings Vol. 3996:
16th European Conference on Mask Technology for Integrated Circuits and Microcomponents
Uwe F. W. Behringer, Editor(s)

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