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Proceedings Paper

Industrial large-aperture XeCl laser for surface processing
Author(s): Tommaso Letardi; Alessandro Baldesi; Sarah Bollanti; Francesca Bonfigli; Paolo Di Lazzaro; Francesco Flora; Gualtiero Giordano; Alessandro Marinai; Daniele Murra; Giovanni Schina; Cheng En Zheng
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Paper Abstract

In the frame of a large project on new materials technologies for photovoltaic and microelectronic applications (FOTO), the process of amorphous silicon (a-Si) transformation into polycrystalline silicon (poly-Si) by means of laser irradiation has been tested with a long-pulse (160 ns), 8 J/p XeCl source. Following the positive results, a laser source, having design parameters of 10 J/p, 120 ns, 10 Hz, has been designed and built, with the aim of realizing a laboratory line for the production of thin film transistors (TFTs) devices.

Paper Details

Date Published: 7 February 2000
PDF: 11 pages
Proc. SPIE 3888, High-Power Lasers in Manufacturing, (7 February 2000); doi: 10.1117/12.377068
Show Author Affiliations
Tommaso Letardi, ENEA Frascati (Italy)
Alessandro Baldesi, EL.EN SpA (Italy)
Sarah Bollanti, ENEA Frascati (Italy)
Francesca Bonfigli, EL.EN SpA (Italy)
Paolo Di Lazzaro, ENEA Frascati (Italy)
Francesco Flora, ENEA Frascati (Italy)
Gualtiero Giordano, ENEA Frascati (Italy)
Alessandro Marinai, ENEA Frascati (Italy)
Daniele Murra, ENEA Frascati (Italy)
Giovanni Schina, ENEA Frascati (Italy)
Cheng En Zheng, EL.EN SpA (Italy)


Published in SPIE Proceedings Vol. 3888:
High-Power Lasers in Manufacturing
Xiangli Chen; Tomoo Fujioka; Akira Matsunawa, Editor(s)

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