Share Email Print

Proceedings Paper

Abnormal increase of time of oxygen diffusion with oxidation of silicon surface under action of powerful laser pulses
Author(s): Alexander F. Banishev; Vladimir S. Golubev; Alexei Yu. Kremnev
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

The paper presents an investigation of deformation response of monocrystalline silicon surface to the action of short laser pulses in the air and in vacuum P approximately equals 10-2 Torr. An anomalously continuous change of the surface relief was identified on irradiation in the air. The observable phenomenon is explained by oxidation of surface layer, enriched with defects.

Paper Details

Date Published: 7 February 2000
PDF: 2 pages
Proc. SPIE 3888, High-Power Lasers in Manufacturing, (7 February 2000); doi: 10.1117/12.377040
Show Author Affiliations
Alexander F. Banishev, Scientific Research Ctr. for Technological Lasers (Russia)
Vladimir S. Golubev, Scientific Research Ctr. for Technological Lasers (Russia)
Alexei Yu. Kremnev, Scientific Research Ctr. for Technological Lasers (Russia)

Published in SPIE Proceedings Vol. 3888:
High-Power Lasers in Manufacturing
Xiangli Chen; Tomoo Fujioka; Akira Matsunawa, Editor(s)

© SPIE. Terms of Use
Back to Top