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Proceedings Paper

Numerical simulation of the surface melt dynamics in excimer laser crystallization of a-Si films on glass for TFT applications
Author(s): Eric Fogarassy; Salome de Unamuno
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Paper Abstract

The use of high-power pulsed excimer lasers, working in the nanosecond (ranging from 20 to 200 ns) duration regime, allows the deposition of a large amount of energy in very short times into the near surface region of amorphous silicon films deposited on glass. Under suitable conditions, the laser irradiation leads to the rapid melting of the a-si layer and its regrowth into polysilicon. In order to optimize the final quality of the poly-Si film and the formation of a large grained material through a so-called super-lateral-growth phenomenon, it appears necessary to control extremely carefully the surface melt dynamics of the laser processing, by developing a numerical simulation based on the resolution of the one-dimensional heat flow equation. It is demonstrated that the melting threshold, melt duration, depth of fusion and solidification velocity, are strongly dependent on the laser pulse duration, substrate temperature, thickness of the silicon and oxide (or nitride) barrier layers. These numerical analyses are also shown to be consistent with the experimental results.

Paper Details

Date Published: 7 February 2000
PDF: 7 pages
Proc. SPIE 3888, High-Power Lasers in Manufacturing, (7 February 2000); doi: 10.1117/12.377024
Show Author Affiliations
Eric Fogarassy, Lab. PHASE/CNRS (France)
Salome de Unamuno, Lab. PHASE/CNRS (France)


Published in SPIE Proceedings Vol. 3888:
High-Power Lasers in Manufacturing
Xiangli Chen; Tomoo Fujioka; Akira Matsunawa, Editor(s)

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