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Proceedings Paper

Ablation process induced by high-energy radiation
Author(s): Masato Funatsu; Koichi Kasuya
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Paper Abstract

The absorption coefficient of silicon carbide plasmas was calculated at temperatures 5,000 K and 7,000 K, thickness from 0.0 mm to 7.5 mm, and pressure from 0.1 MPa to 1.0 MPa. The silicon carbide plasmas were assumed to be isothermal and in local thermodynamic equilibrium. The radiations included molecular bands, atomic lines, and continuum processes. It was found that silicon carbide ablation materials were effective in reducing the radiative flux.

Paper Details

Date Published: 1 February 2000
PDF: 8 pages
Proc. SPIE 3885, High-Power Laser Ablation II, (1 February 2000); doi: 10.1117/12.376999
Show Author Affiliations
Masato Funatsu, Tokyo Institute of Technology (Japan)
Koichi Kasuya, Tokyo Institute of Technology (Japan)

Published in SPIE Proceedings Vol. 3885:
High-Power Laser Ablation II
Claude R. Phipps; Masayuki Niino, Editor(s)

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