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Proceedings Paper

Laser ablation of sapphire with ultrashort pulses
Author(s): Razvan Stoian; David Ashkenasi; Arkadi Rosenfeld; Eleanor E. B. Campbell
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Paper Abstract

We present the results of our investigations on the surface damage/ablation threshold and processing morphology for sapphire after single and multiple laser pulse irradiation at 800 nm in the picosecond and sub-picosecond duration range. The threshold for ablation drops sharply for multiple laser shot irradiation, due to material dependent incubation effects. We observe two distinctively etch phases: `gentle' and `strong'. Monitoring the mechanism and dynamics of the ion expulsion using combination of time-of-flight mass spectroscopy and femtosecond pump-probe technique, we identified Coulomb explosion as the dominant mechanism for ion emission in the `gentle' etch phase on a time scale of 1 ps. The momenta of the emitted ions are equal under these conditions. After sufficient incubation the damage threshold decreases and the ablation is shifted towards the `strong' phase. The velocity distributions shift to lower values, evidence for `phase explosion' is seen and the ions tend here to equal kinetic energies.

Paper Details

Date Published: 1 February 2000
PDF: 11 pages
Proc. SPIE 3885, High-Power Laser Ablation II, (1 February 2000); doi: 10.1117/12.376955
Show Author Affiliations
Razvan Stoian, Max-Born-Institut fuer Nichtlineare Optik und Kurzzeitspektroskopie (Germany)
David Ashkenasi, Max-Born-Institut fuer Nichtlineare Optik und Kurzzeitspektroskopie (Germany)
Arkadi Rosenfeld, Max-Born-Institut fuer Nichtlineare Optik und Kurzzeitspektroskopie (Germany)
Eleanor E. B. Campbell, Gothenburg Univ. and Chalmers Univ. of Technology (Sweden)


Published in SPIE Proceedings Vol. 3885:
High-Power Laser Ablation II
Claude R. Phipps; Masayuki Niino, Editor(s)

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