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Proceedings Paper

Influence of internal stress fields due to point defect clusters on interstitial diffusion in SiC under irradiation
Author(s): Peter V. Rybin; Dmitri V. Kulikov; Yuri V. Trushin; J. Petzoldt; Rossen A. Yankov
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Paper Abstract

The fundamental processes that occur when SiC is implanted at elevated substrate temperatures with high doses of N+ and Al+ ions to synthesize buried layers of (SiC)x(AlN)1-x have been investigated. The influence of the mechanical stress induced by formed clusters of interstitials has been taken into account by adding a special term to the expression of current density of defects in the set of differential equations. The satisfactory agreement of simulation results and experimental data is obtained. The theoretical treatment has enabled one to determine the role of internal stress field on the evolution of defect distribution.

Paper Details

Date Published: 25 January 2000
PDF: 7 pages
Proc. SPIE 4064, Third International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (25 January 2000); doi: 10.1117/12.375445
Show Author Affiliations
Peter V. Rybin, A.F. Ioffe Physical-Technical Institute (Russia)
Dmitri V. Kulikov, A.F. Ioffe Physical-Technical Institute (Russia)
Yuri V. Trushin, A.F. Ioffe Physical-Technical Institute (Russia)
J. Petzoldt, Technische Univ. of Ilmenau (Germany)
Rossen A. Yankov, Research Ctr. of Rosendorf (United States)


Published in SPIE Proceedings Vol. 4064:
Third International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering
Alexander I. Melker, Editor(s)

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